No. |
Part Name |
Description |
Manufacturer |
61 |
ERG3SJS163H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
62 |
ERG5FG163H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
63 |
ERG5FJ163H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
64 |
ERG5SG163H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
65 |
ERG5SJ163H |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
66 |
HCS163HMSR |
Radiation Hardened Synchronous Presettable Counter |
Intersil |
67 |
HCTS163HMSR |
Radiation Hardened Synchronous Counter |
Intersil |
68 |
HY51V18163HGJ |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
69 |
HY51V18163HGJ-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
70 |
HY51V18163HGJ-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
71 |
HY51V18163HGJ-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
72 |
HY51V18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
73 |
HY51V18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
74 |
HY51V18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
75 |
HY51V18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power |
Hynix Semiconductor |
76 |
HY51V18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power |
Hynix Semiconductor |
77 |
HY51V18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power |
Hynix Semiconductor |
78 |
HY51V18163HGT |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
79 |
HY51V18163HGT-5 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
80 |
HY51V18163HGT-6 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
81 |
HY51V18163HGT-7 |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
82 |
HY51V65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
83 |
HY51V65163HGJ-45 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
84 |
HY51V65163HGJ-5 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
85 |
HY51V65163HGJ-6 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
86 |
HY51V65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
87 |
HY51V65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
88 |
HY51V65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
89 |
HY51V65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
90 |
HY51V65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
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