| No. |
Part Name |
Description |
Manufacturer |
| 61 |
GMG316D10SF |
1600 V 3 phase rectifier bridge |
Green Power |
| 62 |
GMG316D10SS |
1600 V 3 phase rectifier bridge |
Green Power |
| 63 |
GS6332UR16D1 |
3 Pin, Low-Power, P Reset Circuits |
Vishay |
| 64 |
GS6333UR16D1 |
3 Pin, Low-Power, P Reset Circuits |
Vishay |
| 65 |
KFG5616D1M-DEB |
OneNAND256 |
Samsung Electronic |
| 66 |
M58LR016D100ZC6T |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 67 |
M58LR016D100ZC6T |
16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory |
ST Microelectronics |
| 68 |
M58LR016D120ZC6T |
16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 69 |
M58LR016D120ZC6T |
16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory |
ST Microelectronics |
| 70 |
M59DR016D100ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 71 |
M59DR016D100ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
ST Microelectronics |
| 72 |
M59DR016D100ZB6T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 73 |
M59DR016D100ZB6T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
ST Microelectronics |
| 74 |
M59DR016D120ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 75 |
M59DR016D120ZB1T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
ST Microelectronics |
| 76 |
M59DR016D120ZB6T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 77 |
M59DR016D120ZB6T |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
ST Microelectronics |
| 78 |
MAX6332UR16D1-T |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 79 |
MAX6333UR16D1-T |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 80 |
MAX6334UR16D1-T |
Ultra-low-voltage, low power microprocessor reset circuit. Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 81 |
MAX6335US16D1-T |
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-high, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 82 |
MAX6336US16D1-T |
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-low, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 83 |
MAX6337US16D1+ |
4-Pin, Ultra Low-Voltage, Low-Power µP Reset Circuits with Manual Reset |
MAXIM - Dallas Semiconductor |
| 84 |
MAX6337US16D1+T |
4-Pin, Ultra Low-Voltage, Low-Power µP Reset Circuits with Manual Reset |
MAXIM - Dallas Semiconductor |
| 85 |
MAX6337US16D1-T |
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-low, open-drain) . Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
| 86 |
MAX6381XR16D1+ |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
MAXIM - Dallas Semiconductor |
| 87 |
MAX6381XR16D1-T |
1.58 V, 1 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 88 |
MAX6381XS16D1-T |
SC70, Single/Dual Low-Voltage, Low-Power ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
| 89 |
MAX6382XR16D1-T |
1.58 V, 1 ms, SC70, single/dual low-voltage, low-power mP reset circuit |
MAXIM - Dallas Semiconductor |
| 90 |
MAX6382XS16D1-T |
SC70, Single/Dual Low-Voltage, Low-Power ��P Reset Circuits |
MAXIM - Dallas Semiconductor |
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