| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 62 |
2N3196 |
Silicon PNP Transistor |
Motorola |
| 63 |
2N4196 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 64 |
2N4196 |
THYRISTOR |
Motorola |
| 65 |
2N5196 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
| 66 |
2N5196 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 67 |
2N5196 |
Trans JFET N-CH 6-Pin TO-71 |
New Jersey Semiconductor |
| 68 |
2N5196 |
Monolithic General Purpose |
Vishay |
| 69 |
2SA1960 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 70 |
2SA1960 |
Silicon PNP Transistor |
Hitachi Semiconductor |
| 71 |
2SA1961 |
Silicon PNP epitaxial planer type |
Panasonic |
| 72 |
2SA1962 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 73 |
2SA1962 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 74 |
2SA1962 |
Silicon PNP Power Transistors TO-3P(I) package |
Savantic |
| 75 |
2SA1962 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 76 |
2SA1963 |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications |
SANYO |
| 77 |
2SA1964 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220FP |
New Jersey Semiconductor |
| 78 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 79 |
2SA1965 |
PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications |
SANYO |
| 80 |
2SA1965 |
TRANSISTOR (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 81 |
2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 82 |
2SA1968 |
High-Voltage Amp, High-Voltage Switching Applications |
SANYO |
| 83 |
2SA1968LS |
Dynamic Focus Application Transistors |
SANYO |
| 84 |
2SA1969 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching Applications |
SANYO |
| 85 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
| 86 |
2SC1966 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 87 |
2SC1967 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 88 |
2SC1968 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 89 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 90 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
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