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Datasheets for 199

Datasheets found :: 1489
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No. Part Name Description Manufacturer
61 2N1991 Silicon PNP Transistor Motorola
62 2N1991 Bipolar PNP Device in a Hermetically sealed TO39 Metal Package SemeLAB
63 2N1991 General purpose silicon transistor, amplifiers and switches SGS-ATES
64 2N1992 Silicon NPN Transistor Motorola
65 2N1993 Germanium NPN Transistor Motorola
66 2N1994 Germanium NPN Transistor Motorola
67 2N1995 Germanium NPN Transistor Motorola
68 2N1996 Germanium NPN Transistor Motorola
69 2N1997 Germanium PNP Transistor Motorola
70 2N1998 Germanium PNP Transistor Motorola
71 2N1999 Germanium PNP Transistor Motorola
72 2N2199 Germanium PNP Transistor Motorola
73 2N3199 Silicon PNP Transistor Motorola
74 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
75 2N4199 THYRISTOR Motorola
76 2N4199 SILICON CONTROLLED RECTIFIERS Motorola
77 2N4199 Thyristor SCR 800V 200A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
78 2N5199 Dual N-channel JFET general purpose amplifier. Intersil
79 2N5199 N-Channel Junction FET (Field-Effect Transistor) Motorola
80 2N5199 Trans JFET N-CH 6-Pin TO-71 New Jersey Semiconductor
81 2N5199 FET dual transistor, N channel SESCOSEM
82 2N5199 Monolithic General Purpose Vishay
83 2N6199 25 W, 28 V, 100-200 MHz, VHF communication Acrian
84 2N6199 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
85 2SA1199 TRANSISTORS ROHM
86 2SA1199S TRANSISTORS ROHM
87 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO Isahaya Electronics Corporation
88 2SA1995 450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. Isahaya Electronics Corporation
89 2SA1998 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. Isahaya Electronics Corporation
90 2SC1199 Silicon NPN epitaxial planar transistor, RF Wide-Band low-noise amplifier TOSHIBA


Datasheets found :: 1489
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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