No. |
Part Name |
Description |
Manufacturer |
61 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
62 |
2N1991 |
Silicon PNP Transistor |
Motorola |
63 |
2N1991 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
64 |
2N1991 |
General purpose silicon transistor, amplifiers and switches |
SGS-ATES |
65 |
2N1992 |
Silicon NPN Transistor |
Motorola |
66 |
2N1993 |
Germanium NPN Transistor |
Motorola |
67 |
2N1994 |
Germanium NPN Transistor |
Motorola |
68 |
2N1995 |
Germanium NPN Transistor |
Motorola |
69 |
2N1996 |
Germanium NPN Transistor |
Motorola |
70 |
2N1997 |
Germanium PNP Transistor |
Motorola |
71 |
2N1998 |
Germanium PNP Transistor |
Motorola |
72 |
2N1999 |
Germanium PNP Transistor |
Motorola |
73 |
2N2199 |
Germanium PNP Transistor |
Motorola |
74 |
2N3199 |
Silicon PNP Transistor |
Motorola |
75 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
76 |
2N4199 |
THYRISTOR |
Motorola |
77 |
2N4199 |
SILICON CONTROLLED RECTIFIERS |
Motorola |
78 |
2N4199 |
Thyristor SCR 800V 200A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
79 |
2N5199 |
Dual N-channel JFET general purpose amplifier. |
Intersil |
80 |
2N5199 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
81 |
2N5199 |
General Purpose Dual JFETs |
National Semiconductor |
82 |
2N5199 |
Trans JFET N-CH 6-Pin TO-71 |
New Jersey Semiconductor |
83 |
2N5199 |
FET dual transistor, N channel |
SESCOSEM |
84 |
2N5199 |
Monolithic General Purpose |
Vishay |
85 |
2N6199 |
25 W, 28 V, 100-200 MHz, VHF communication |
Acrian |
86 |
2N6199 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
87 |
2SA1199 |
TRANSISTORS |
ROHM |
88 |
2SA1199S |
TRANSISTORS |
ROHM |
89 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
90 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
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