No. |
Part Name |
Description |
Manufacturer |
61 |
1N816 |
Leaded Zener Diode Stabistor |
Central Semiconductor |
62 |
1N816 |
Constant-voltage reference diode |
Motorola |
63 |
1N816 |
Silicon Signal Diode |
Motorola |
64 |
1N8160 |
Low Capacitance TVS |
Microsemi |
65 |
1N8160E3 |
Low Capacitance TVS |
Microsemi |
66 |
1N8161 |
Low Capacitance TVS |
Microsemi |
67 |
1N8161US |
Low Capacitance TVS |
Microsemi |
68 |
1N817 |
Silicon Signal Diode |
Motorola |
69 |
1N818 |
Silicon Planar Diode |
ITT Semiconductors |
70 |
1N818 |
Silicon Signal Diode |
Motorola |
71 |
1N819 |
Silicon Signal Diode |
Motorola |
72 |
1N81A |
Gold Bond Germanium Diode |
ITT Semiconductors |
73 |
1N81A |
Germanium Signal Diode |
Motorola |
74 |
1N81A |
GOLD BOUNDED GERMANUM DIODE |
New Jersey Semiconductor |
75 |
1N81H |
Diode Schottky 20V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
76 |
1N82 |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
77 |
1N82 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
78 |
1N821 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
79 |
1N821 |
Voltage reference diode |
mble |
80 |
1N821 |
0TC Reference Voltage Zener |
Microsemi |
81 |
1N821 |
0TC Reference Voltage Zener |
Microsemi |
82 |
1N821 |
Temperature-compesated zener reference diode |
Motorola |
83 |
1N821 |
Reference Diode |
Motorola |
84 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
85 |
1N821 |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
86 |
1N821 |
Voltage reference diodes |
Philips |
87 |
1N821 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
88 |
1N821 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
89 |
1N821 (DO35) |
0TC Reference Voltage Zener |
Microsemi |
90 |
1N821-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
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