No. |
Part Name |
Description |
Manufacturer |
61 |
BC212 |
ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW |
Fairchild Semiconductor |
62 |
BC477 |
ft min 100 MHz hfe min 50 Transistor polarity PNP Current Ic continuous max 0.15 A Voltage Vcbo 90 V Voltage Vceo 80 V Current Ic (hfe) 2 mA Power Ptot 360 mW |
SGS Thomson Microelectronics |
63 |
BC848A |
hfe min 110 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
64 |
BC848C |
hfe min 420 NF max. 10 dB Transistor polarity NPN Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 250 mW |
Fairchild Semiconductor |
65 |
BC858C |
hfe min 420 NF max. 10 dB Transistor polarity PNP Current Ic continuous max 100 mA Voltage Vceo 30 V Current Ic (hfe) 2 mA Power Ptot 350 mW |
Fairchild Semiconductor |
66 |
BFP181 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
67 |
BFP181R |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA |
Infineon |
68 |
BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
69 |
BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
70 |
BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA |
Infineon |
71 |
BFP183R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
72 |
BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
73 |
BFP183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
74 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
75 |
BFR183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
76 |
BFR183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
77 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
78 |
BFS481 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA) |
Siemens |
79 |
BSM232 |
βSM232 Magnetic HALL - Effect sensors |
IPRS Baneasa |
80 |
BZV58C100 |
100 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
81 |
BZV58C110 |
110 V, 12 mA, 5 W glass passivated zener diode |
Fagor |
82 |
BZV85_C120 |
120 V, 2 mA, Silicon planar power diode |
GOOD-ARK Electronics |
83 |
BZV85_C130 |
130 V, 2 mA, Silicon planar power diode |
GOOD-ARK Electronics |
84 |
BZV85_C150 |
150 V, 2 mA, Silicon planar power diode |
GOOD-ARK Electronics |
85 |
BZX85C120GP |
120 V, 2 mA, 1.3 W glass passivated zener diode |
Fagor |
86 |
BZX85C130GP |
130 V, 2 mA, 1.3 W glass passivated zener diode |
Fagor |
87 |
BZX85C150GP |
150 V, 2 mA, 1.3 W glass passivated zener diode |
Fagor |
88 |
BZX85_C120 |
120 V, 2 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
89 |
BZX85_C130 |
130 V, 2 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
90 |
BZX85_C150 |
150 V, 2 mA, Silicon planar power zener diode |
GOOD-ARK Electronics |
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