No. |
Part Name |
Description |
Manufacturer |
61 |
AS29F200B-70TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
62 |
AS29F200B-70TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
63 |
AS29F200B-90SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
64 |
AS29F200B-90SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
65 |
AS29F200B-90TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
66 |
AS29F200B-90TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
67 |
ATV02W200B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=20V, Tolerance=5% |
Comchip Technology |
68 |
BYW4200B-RL |
HIGH EFFICIENCY FAST RECOVERY DIODE |
ST Microelectronics |
69 |
BYW4200B-TR |
HIGH EFFICIENCY FAST RECOVERY DIODES |
ST Microelectronics |
70 |
FLC01-200B-TR |
FIRE LIGHTER CIRCUIT - (ASD) |
ST Microelectronics |
71 |
G1-200B-85-1.6 |
Processor Series Low Power Integrated x86 Solution |
National Semiconductor |
72 |
GL-200B-85-2.2 |
Geode Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
73 |
GM-200B-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
74 |
GM-200B-85 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
75 |
IS42S32200B-6T |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
76 |
IS42S32200B-6TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
77 |
IS42S32200B-6TL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
78 |
IS42S32200B-6TLI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
79 |
IS42S32200B-7T |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
80 |
IS42S32200B-7TI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
81 |
IS42S32200B-7TL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
82 |
IS42S32200B-7TLI |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
83 |
K7A203200B-QC(I)14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
84 |
K7A203200B-QC14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
85 |
K7A203200B-QCI14 |
64Kx36/x32 Synchronous SRAM |
Samsung Electronic |
86 |
K7A403200B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
87 |
LFX1200B-03F900C |
The ispXPGA architecture |
Lattice Semiconductor |
88 |
LFX1200B-03F900I |
The ispXPGA architecture |
Lattice Semiconductor |
89 |
LFX1200B-04F900C |
The ispXPGA architecture |
Lattice Semiconductor |
90 |
LFX1200B-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
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