| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AS29F200T-55SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
| 62 |
AS29F200T-55TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
| 63 |
AS29F200T-55TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns |
Alliance Semiconductor |
| 64 |
AS29F200T-70SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 65 |
AS29F200T-70SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 66 |
AS29F200T-70TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 67 |
AS29F200T-70TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 68 |
AS29F200T-90SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 69 |
AS29F200T-90SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 70 |
AS29F200T-90TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 71 |
AS29F200T-90TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns |
Alliance Semiconductor |
| 72 |
AS7C33128PFS32A-200TQC |
3.3V 128K X 32/36 pipeline burst synchronous SRAM |
Alliance Semiconductor |
| 73 |
AS7C33128PFS32A-200TQI |
3.3V 128K X 32/36 pipeline burst synchronous SRAM |
Alliance Semiconductor |
| 74 |
AS7C33128PFS36A-200TQC |
3.3V 128K X 32/36 pipeline burst synchronous SRAM |
Alliance Semiconductor |
| 75 |
AS7C33128PFS36A-200TQI |
3.3V 128K X 32/36 pipeline burst synchronous SRAM |
Alliance Semiconductor |
| 76 |
BRY54-200T |
Thyristors |
SESCOSEM |
| 77 |
BRY54-200T |
Thiristor - normal series |
SESCOSEM |
| 78 |
BYX42/200T |
Silicon rectifier diode |
Mikroelektronikai Vallalat |
| 79 |
CAT3200TDI-TE13 |
Low Noise Regulated Charge Pump DC-DC Converter |
Catalyst Semiconductor |
| 80 |
CAT3200TDI-TE7 |
Low Noise Regulated Charge Pump DC-DC Converter |
Catalyst Semiconductor |
| 81 |
CM200TU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 82 |
CM200TU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 83 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 84 |
CM200TU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 85 |
CM200TU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 86 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 87 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 88 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 89 |
CY8C3666AXI-200T |
PSoC� 3 CY8C36 Programmable System-on-Chip |
Cypress |
| 90 |
DS08MB200TSQ/NOPB |
Dual 800 Mbps 2:1/1:2 LVDS Mux/Buffer 48-WQFN -40 to 85 |
Texas Instruments |
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