| No. |
Part Name |
Description |
Manufacturer |
| 61 |
29C021PI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 62 |
29C021PM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 63 |
29C021PM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 64 |
29C021TC-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 65 |
29C021TC-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 66 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 67 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 68 |
29C021TM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 69 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 70 |
FQI3N25 |
250 N-Channel MOSFET |
Fairchild Semiconductor |
| 71 |
NMC2116J-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 72 |
NMC2116N-25L |
250 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
| 73 |
NMC27C010Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 74 |
NMC27C010Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 75 |
NMC27C010QE250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 76 |
NMC27C010QM250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 77 |
NMC27C1024Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 78 |
NMC27C1024Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 79 |
NMC27C128BN25 |
250 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 80 |
NMC27C128BN250 |
250 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 81 |
NMC27C128BQ25 |
250 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 82 |
NMC27C128BQ250 |
250 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 83 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 84 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 85 |
NMC27C256BNE25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 86 |
NMC27C256BNE250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 87 |
NMC27C256BQ25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 88 |
NMC27C256BQ250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 89 |
NMC27C256Q25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 90 |
NMC27C256Q250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
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