No. |
Part Name |
Description |
Manufacturer |
61 |
DS1258AB |
128k x 16 NV SRAM |
MAXIM - Dallas Semiconductor |
62 |
DS1258AB-100 |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
63 |
DS1258AB-100# |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
64 |
DS1258AB-100-IND |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
65 |
DS1258AB-70 |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
66 |
DS1258AB-70# |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
67 |
DS1258AB-70-IND |
128k x 16 Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
68 |
FSA1258A |
Low RON Low Voltage Dual-SPST Analog Switch with Low ICCT "A" Option |
Fairchild Semiconductor |
69 |
HFA45HC120C |
1200V 28A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
70 |
HFA45HC60C |
600V 45A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
71 |
HFA45HC60CSCS |
600V 45A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
72 |
HFB50HC20 |
200V 50A Hi-Rel Ultra-Fast Discrete Diode in a TO-258AA package |
International Rectifier |
73 |
HFB50HC20C |
200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
74 |
HFB50HC20CSCS |
200V 50A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package |
International Rectifier |
75 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
76 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
77 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
78 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
79 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
80 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
81 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
82 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
83 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
84 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
85 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
86 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
87 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
88 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
89 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
90 |
ICX258AK |
Diagonal 6mm (Type1/3) CCD Image Sensor for NTSC |
SONY |
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