No. |
Part Name |
Description |
Manufacturer |
61 |
2N6308 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
62 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
63 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
64 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
65 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
66 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
67 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
68 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
69 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
70 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
71 |
2N6544 |
POWER TRANSISTORS(8A,125W) |
MOSPEC Semiconductor |
72 |
2N6544 |
8A NPN Silicon 125W power transistor SWITCHMODE series |
Motorola |
73 |
2N6545 |
POWER TRANSISTORS(8A,125W) |
MOSPEC Semiconductor |
74 |
2N6545 |
8A NPN Silicon 125W power transistor SWITCHMODE series |
Motorola |
75 |
2SA1011 |
POWER TRANSISTORS(1.5A,160V,25W) |
MOSPEC Semiconductor |
76 |
2SA1012 |
POWER TRANSISTORS(5A,50V,25W) |
MOSPEC Semiconductor |
77 |
2SA671 |
POWER TRANSISTORS(3.0A,50V,25W) |
MOSPEC Semiconductor |
78 |
2SA940 |
POWER TRANSISTORS(1.5A,150V,25W) |
MOSPEC Semiconductor |
79 |
2SA968B |
V(cbo): 200V; V(ceo): 200V; V(ebo): 5V; 1.5A; 25W ; silicon PNP epitaxial type silicon power transistor |
TOSHIBA |
80 |
2SC1061 |
POWER TRANSISTORS(3.0A,50V,25W) |
MOSPEC Semiconductor |
81 |
2SC2073 |
POWER TRANSISTORS(1.5A,150V,25W) |
MOSPEC Semiconductor |
82 |
2SC2381 |
Silicon NPN epitaxial planar UHF band power transistor 25W |
TOSHIBA |
83 |
2SD1409 |
6A; 25W; V(ceo): 400V; NPN darlington transistor |
TOSHIBA |
84 |
2SD1410 |
6A; 25W; V(ceo): 250V; NPN darlington transistor |
TOSHIBA |
85 |
2SD401A |
POWER TRANSISTORS(2A,150V,25W) |
MOSPEC Semiconductor |
86 |
4N25W |
6-Pin DIP Package Phototransistor Output Optocoupler |
Fairchild Semiconductor |
87 |
5962F9217401VDA(54AC2525WFQMLV) |
Minimum Skew Clock Driver |
National Semiconductor |
88 |
5962F9217401VDA(54AC2525WFQMLV) |
Minimum Skew Clock Driver |
National Semiconductor |
89 |
5962R9217401VDA(54AC2525WRQMLV) |
Minimum Skew Clock Driver |
National Semiconductor |
90 |
5962R9217401VDA(54AC2525WRQMLV) |
Minimum Skew Clock Driver |
National Semiconductor |
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