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Datasheets for 25W

Datasheets found :: 1376
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N6136 NPN silicon RF power transistor 25W - 470MHz designed for 12.5V Motorola
62 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
63 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
64 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
65 2N6306 8A high-voltage NPN silicon 125W power NPN transistor Motorola
66 2N6307 8A high-voltage NPN silicon 125W power NPN transistor Motorola
67 2N6308 8A high-voltage NPN silicon 125W power NPN transistor Motorola
68 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
69 2N6515 0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE Continental Device India Limited
70 2N6516 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
71 2N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
72 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
73 2N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
74 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
75 2N6520 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
76 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
77 2N6544 POWER TRANSISTORS(8A,125W) MOSPEC Semiconductor
78 2N6544 8A NPN Silicon 125W power transistor SWITCHMODE series Motorola
79 2N6545 POWER TRANSISTORS(8A,125W) MOSPEC Semiconductor
80 2N6545 8A NPN Silicon 125W power transistor SWITCHMODE series Motorola
81 2N6985 125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon Motorola
82 2SA1011 POWER TRANSISTORS(1.5A,160V,25W) MOSPEC Semiconductor
83 2SA1012 POWER TRANSISTORS(5A,50V,25W) MOSPEC Semiconductor
84 2SA671 POWER TRANSISTORS(3.0A,50V,25W) MOSPEC Semiconductor
85 2SA940 POWER TRANSISTORS(1.5A,150V,25W) MOSPEC Semiconductor
86 2SA968B V(cbo): 200V; V(ceo): 200V; V(ebo): 5V; 1.5A; 25W ; silicon PNP epitaxial type silicon power transistor TOSHIBA
87 2SC1061 POWER TRANSISTORS(3.0A,50V,25W) MOSPEC Semiconductor
88 2SC2073 POWER TRANSISTORS(1.5A,150V,25W) MOSPEC Semiconductor
89 2SC2381 Silicon NPN epitaxial planar UHF band power transistor 25W TOSHIBA
90 2SC2799 NPN epitaxial planar RF power UHF transistor 25W 24V Mitsubishi Electric Corporation


Datasheets found :: 1376
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