| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AN1334 |
ST10F269/ST10F280 SYSTEM RESET |
SGS Thomson Microelectronics |
| 62 |
APT5028BVR |
POWER MOS V 500V 20A 0.280 Ohm |
Advanced Power Technology |
| 63 |
APT5028SVR |
POWER MOS V 500V 20A 0.280 Ohm |
Advanced Power Technology |
| 64 |
APT8028JVR |
POWER MOS V 800V 28A 0.280 Ohm |
Advanced Power Technology |
| 65 |
AR670S44 |
4400 V, 2280 A, 22 kA rectifier diode |
POSEICO SPA |
| 66 |
AT89C5130A-M |
USB C51-based Microcontroller with 16K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, Extended Range Power Supply: 2.7V to 5.5V, ... |
Atmel |
| 67 |
AT89C5131 |
USB C51-based Microcontroller with 32K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, 7 USB Endpoints, TWI, SPI, UART, PCA |
Atmel |
| 68 |
AT89C5131A-L |
USB C51-based Microcontroller with 32K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, Low Voltage Range Power Supply: 3.0V to ... |
Atmel |
| 69 |
AT89C5131A-M |
USB C51-based Microcontroller with 32K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, Extended Range Power Supply: 2.7V to 5.5V, ... |
Atmel |
| 70 |
BZW04-239 |
280 V, 1 mA, 400 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 71 |
BZW04-239B |
280 V, 1 mA, 400 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 72 |
CL100 |
0.800W General Purpose NPN Metal Can Transistor. V Vceo, A Ic, 50 - 280 hFE. |
Continental Device India Limited |
| 73 |
CS5171GDR8G |
1.5 A 280 kHz/560 kHz Boost Regulators |
ON Semiconductor |
| 74 |
CS5173EDR8G |
1.5 A 280 kHz/560 kHz Boost Regulators |
ON Semiconductor |
| 75 |
CSD545G |
0.600W Low Frequency NPN Plastic Leaded Transistor. 25V Vceo, 1.000A Ic, 280 - 560 hFE. |
Continental Device India Limited |
| 76 |
ERRATA |
ST10F280 - ERRATA SHEET REVISION AB - FEB 2002 |
ST Microelectronics |
| 77 |
FSS913A0D |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 78 |
FSS913A0D1 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 79 |
FSS913A0D3 |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 80 |
FSS913A0R |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 81 |
FSS913A0R1 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 82 |
FSS913A0R3 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 83 |
FSS913A0R4 |
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 84 |
FSS913AOD |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 85 |
FSS913AOR |
10A, -100V, 0.280 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
Intersil |
| 86 |
IRF646 |
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 87 |
IRF646 |
14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET |
Intersil |
| 88 |
ISPLSI2064VE-280LB100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 89 |
ISPLSI2064VE-280LT100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
| 90 |
ISPLSI2064VE-280LT44 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
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