| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N6428A |
Silicon NPN Transistor |
Motorola |
| 62 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
| 63 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 64 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 65 |
2N6429 |
Silicon NPN Transistor |
Motorola |
| 66 |
2N6429A |
Silicon NPN Transistor |
Motorola |
| 67 |
H2N6426 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 68 |
H2N6427 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 69 |
SF_2N6425 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| | | |
