| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SK579L |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 62 |
2SK579S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 63 |
2SK579S |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 64 |
2SK58 |
Silicon N-Channel Junction Type Dual FET (DC-to-VHF Use, Low Noise) |
SONY |
| 65 |
2SK580 |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 66 |
2SK580L |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 67 |
2SK580L |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 68 |
2SK580S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 69 |
2SK580S |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 70 |
2SK583 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications |
SANYO |
| 71 |
2SK591 |
N-Channel MOS Field Effect Power Transistor |
NEC |
| 72 |
2SK591 |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR |
NEC |
| 73 |
2SK595 |
2SK595 |
Unknow |
| 74 |
2SK595 |
2SK595 |
Unknow |
| 75 |
2SK596 |
CAPACITOR MICROPHONE APPLICATIONS |
SANYO |
| 76 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 77 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 78 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 79 |
2SK596D |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 80 |
2SK596E |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 81 |
GH3-P012SK5 |
Relay. Coil voltage 12VDC. Footprint special. Sealed. Coil sensitivity 0.2W. Duty version 5A. |
Global Components & Controls |
| 82 |
GH3-R012SK5 |
Relay. Coil voltage 12VDC. Footprint regular. Sealed. Coil sensitivity 0.2W. Duty version 5A. |
Global Components & Controls |
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