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Datasheets for 30 A

Datasheets found :: 93
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
61 STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed ST Microelectronics
62 STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT ST Microelectronics
63 STGW30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed ST Microelectronics
64 STGW30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed ST Microelectronics
65 STGW30NC60W 30 A - 600 V - ultra fast IGBT ST Microelectronics
66 STGW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed ST Microelectronics
67 STGW30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed ST Microelectronics
68 STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed ST Microelectronics
69 STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed ST Microelectronics
70 STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed ST Microelectronics
71 STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed ST Microelectronics
72 STL130N8F7 N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package ST Microelectronics
73 STL30P3LLH6 P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package ST Microelectronics
74 STP38N65M5 N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-220 package ST Microelectronics
75 STPS30M100S 100 V, 30 A power Schottky rectifier ST Microelectronics
76 STPS30M100SFP 100 V, 30 A power Schottky rectifier ST Microelectronics
77 STPS30M100SR 100 V, 30 A power Schottky rectifier ST Microelectronics
78 STPS30M100ST 100 V, 30 A power Schottky rectifier ST Microelectronics
79 STPS6045CFSY1 Aerospace 2 x 30 A - 45 V power fast rectifier ST Microelectronics
80 STPS6045HR Aerospace 2 x 30 A - 45 V power fast rectifier ST Microelectronics
81 STW38N65M5 N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package ST Microelectronics
82 T6401B Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. Motorola
83 T6401D Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 400 V. Motorola
84 T6401M Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 600 V. Motorola
85 T6401N Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. Motorola
86 T6411B Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. Motorola
87 T6411D Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 400 V. Motorola
88 T6411M Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 600 V. Motorola
89 T6411N Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. Motorola
90 T6421B Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. Motorola


Datasheets found :: 93
Page: | 1 | 2 | 3 | 4 |



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