No. |
Part Name |
Description |
Manufacturer |
61 |
STGP30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
62 |
STGW30H60DF |
600 V, 30 A high speed trench gate field-stop IGBT |
ST Microelectronics |
63 |
STGW30H60DFB |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
ST Microelectronics |
64 |
STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
65 |
STGW30NC60W |
30 A - 600 V - ultra fast IGBT |
ST Microelectronics |
66 |
STGW30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
67 |
STGW30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
68 |
STGWT30H60DFB |
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed |
ST Microelectronics |
69 |
STGWT30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed |
ST Microelectronics |
70 |
STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
71 |
STGWT30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
72 |
STL130N8F7 |
N-channel 80 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
73 |
STL30P3LLH6 |
P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
74 |
STP38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
75 |
STPS30M100S |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
76 |
STPS30M100SFP |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
77 |
STPS30M100SR |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
78 |
STPS30M100ST |
100 V, 30 A power Schottky rectifier |
ST Microelectronics |
79 |
STPS6045CFSY1 |
Aerospace 2 x 30 A - 45 V power fast rectifier |
ST Microelectronics |
80 |
STPS6045HR |
Aerospace 2 x 30 A - 45 V power fast rectifier |
ST Microelectronics |
81 |
STW38N65M5 |
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh(TM) V Power MOSFET in TO-247 package |
ST Microelectronics |
82 |
T6401B |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
83 |
T6401D |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
84 |
T6401M |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
85 |
T6401N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
86 |
T6411B |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
87 |
T6411D |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 400 V. |
Motorola |
88 |
T6411M |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 600 V. |
Motorola |
89 |
T6411N |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 800 V. |
Motorola |
90 |
T6421B |
Triac. Silicon bidirectional triode thyristor. 30 A RMS. Repetitive peak off-state voltage 200 V. |
Motorola |
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