| No. |
Part Name |
Description |
Manufacturer |
| 61 |
28M0VS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 62 |
28M0W |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 63 |
28M0WC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 64 |
28M0WS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 65 |
28M0X |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 66 |
28M0XC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 67 |
28M0XS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 68 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
| 69 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
| 70 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 71 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 72 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 73 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
| 74 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
| 75 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
| 76 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 77 |
2SC400 |
Silicon NPN epitaxial planar RF transistor, fT=300MHz |
TOSHIBA |
| 78 |
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 79 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 80 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 81 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 82 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 83 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 84 |
66015-203 |
5-10V; 50mA; 300mW single channel optocoupler |
Micropac Industries |
| 85 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 86 |
AAT2500M |
400mA Step-Down Converter and 300mA LDO |
Skyworks Solutions |
| 87 |
AAT2500MITP-AW-T1 |
400mA Step-Down Converter and 300mA LDO |
Skyworks Solutions |
| 88 |
AAT2557 |
500mA Battery Charger and 300mA LDO Regulator for Portable Systems |
Skyworks Solutions |
| 89 |
AAT2557ITO-CT-T1 |
500mA Battery Charger and 300mA LDO Regulator for Portable Systems 3V |
Skyworks Solutions |
| 90 |
AAT2557ITO-CW-T1 |
500mA Battery Charger and 300mA LDO Regulator for Portable Systems 3.3V |
Skyworks Solutions |
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