| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5230B |
500mW 5% DO-35 ZENER DIODE |
Rectron Semiconductor |
| 62 |
1N5230B |
Diodes>Zener |
Renesas |
| 63 |
1N5230B |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 64 |
1N5230B |
Silicon Zener Diodes |
Vishay |
| 65 |
1N5230B (DO-35) |
Zener Voltage Regulator Diode |
Microsemi |
| 66 |
1N5230B (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 67 |
1N5230B-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 68 |
1N5230B-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 69 |
1N5230B-B |
Zener Diode |
Rectron Semiconductor |
| 70 |
1N5230B-G |
Zener Diodes, PD=0.5Watts, VZ=4.7V |
Comchip Technology |
| 71 |
1N5230B-LCC3 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 72 |
1N5230B-T |
Zener Diode |
Rectron Semiconductor |
| 73 |
1N5230BTR |
4.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 74 |
1N5230BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 75 |
1N5230BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.7 V. Tolerance +-5%. |
Microsemi |
| 76 |
1N5230BUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 77 |
1N5230B_T26A |
4.3V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 78 |
1N5230B_T50A |
4.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 79 |
1N5230B_T50R |
4.7V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 80 |
1N5530B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 81 |
1N5530B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 82 |
1N5530B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 83 |
1N5530B |
Low Voltage Avalanche Zener |
Microsemi |
| 84 |
1N5530B |
Low Voltage Avalanche Zener |
Microsemi |
| 85 |
1N5530B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 10V ±5% tolerance |
Motorola |
| 86 |
1N5530B |
Diode Zener Single 10V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 87 |
1N5530B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 88 |
1N5530B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 89 |
1N5530B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 90 |
1N5530B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
