| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5237B-LCC3 |
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 62 |
1N5237B-T |
Zener Diode |
Rectron Semiconductor |
| 63 |
1N5237BT |
Zeners |
Fairchild Semiconductor |
| 64 |
1N5237BTR |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 65 |
1N5237BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 66 |
1N5237BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-5%. |
Microsemi |
| 67 |
1N5237BUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 68 |
1N5237B_T26A |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 69 |
1N5237B_T50A |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 70 |
1N5237B_T50R |
8.2V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 71 |
1N5337B |
5 Watt Surmetic 40 Silicon Zener Diodes |
Boca Semiconductor Corporation |
| 72 |
1N5337B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 73 |
1N5337B |
Zener Voltage Regulator Diode |
Microsemi |
| 74 |
1N5337B |
5 Watt surmetic silicon Zener Diode (silicon oxide passivated) |
Motorola |
| 75 |
1N5337B |
Zener Diode 4.7V 5W |
Motorola |
| 76 |
1N5337B |
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS |
Motorola |
| 77 |
1N5337B |
500 mW DO-35 Glass Zener Voltage Regulator Diodes |
Motorola |
| 78 |
1N5337B |
Diode Zener Single 4.7V 5% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 79 |
1N5337B |
5 Watt Surmetic™ 40 Silicon Zener Diodes |
ON Semiconductor |
| 80 |
1N5337B |
5W SILICON ZENER DIODES |
ST Microelectronics |
| 81 |
1N5337B/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 82 |
1N5337B/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 83 |
1N5337Be3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 84 |
1N5337BE3/TR13 (DO-201AE) |
Zener Voltage Regulator Diode |
Microsemi |
| 85 |
1N5337Be3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 86 |
1N5337BRL |
5 Watt Surmetic™ 40 Silicon Zener Diodes |
ON Semiconductor |
| 87 |
1N5537B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 88 |
1N5537B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 89 |
1N5537B |
Low Voltage Avalanche Zener |
Microsemi |
| 90 |
1N5537B |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
