No. |
Part Name |
Description |
Manufacturer |
61 |
1N5782 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
62 |
1N5783 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
63 |
1N5784 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
64 |
1N5785 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
65 |
1N5786 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
66 |
1N5787 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
67 |
1N5788 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
68 |
1N5789 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
69 |
1N5790 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
70 |
1N5791 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
71 |
1N5792 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
72 |
1N5793 |
Epitaxial PNPN 4-Layer diode 150mW |
Motorola |
73 |
2SA1464-L |
Silicon transistor |
NEC |
74 |
2SB624-L |
Silicon transistor |
NEC |
75 |
2SC1654-L |
Silicon transistor |
NEC |
76 |
2SC3624-L |
Silicon transistor |
NEC |
77 |
2SC3734-L |
Silicon transistor |
NEC |
78 |
2SJ204-L |
MOS field effect transistor |
NEC |
79 |
4-LAYER DIODES |
Application Notes |
ITT Semiconductors |
80 |
4-LEAD PLASTIC |
Outline drawings |
SGS-ATES |
81 |
4E100-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
82 |
4E100-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
83 |
4E100A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
84 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
85 |
4E100M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
86 |
4E20-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
87 |
4E20-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
88 |
4E200-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
89 |
4E200-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
90 |
4E200A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
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