| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4371 |
400mW Zener Diode |
Motorola |
| 62 |
1N4371 |
Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 63 |
1N4371A |
400mW Zener Diode |
Motorola |
| 64 |
1N4371A |
Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 65 |
1N4372 |
400mW Zener Diode |
Motorola |
| 66 |
1N4372 |
Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 67 |
1N4372A |
400mW Zener Diode |
Motorola |
| 68 |
1N4372A |
Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 69 |
1N4454 |
400mW 75 Volt Silicon Epitaxial Diode |
Micro Commercial Components |
| 70 |
1N4621A |
Diode Zener Single 3.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 71 |
1N4625A |
Diode Zener Single 5.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 72 |
1N550 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 73 |
1N551 |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 74 |
1N5518 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±20% tolerance |
Motorola |
| 75 |
1N5518 |
Diode Zener Single 3.3V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 76 |
1N5518A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±10% tolerance |
Motorola |
| 77 |
1N5518A |
Diode Zener Single 3.3V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 78 |
1N5518B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.3V ±5% tolerance |
Motorola |
| 79 |
1N5518B |
Diode Zener Single 3.3V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 80 |
1N5518C |
Diode Zener Single 3.3V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 81 |
1N5518D |
Diode Zener Single 3.3V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 82 |
1N5519 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±20% tolerance |
Motorola |
| 83 |
1N5519 |
Diode Zener Single 3.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 84 |
1N5519A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±10% tolerance |
Motorola |
| 85 |
1N5519A |
Diode Zener Single 3.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 86 |
1N5519B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.6V ±5% tolerance |
Motorola |
| 87 |
1N5519B |
Diode Zener Single 3.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 88 |
1N5519C |
Diode Zener Single 3.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 89 |
1N5519D |
Diode Zener Single 3.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 90 |
1N5520 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 3.9V ±20% tolerance |
Motorola |
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