No. |
Part Name |
Description |
Manufacturer |
61 |
MAX6410BS40-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
62 |
MAX6410BS41-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
63 |
MAX6410BS42-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
64 |
MAX6410BS43-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
65 |
MAX6410BS44 |
Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
66 |
MAX6410BS44-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
67 |
MAX6410BS45-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
68 |
MAX6410BS46-T |
Voltage Detectors in 4-Bump (2 X 2) Chip-Scale Package |
MAXIM - Dallas Semiconductor |
69 |
MSP3410B |
Multistandard Sound Processor |
Micronas |
70 |
NDB410B |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
71 |
NDB410BE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
72 |
NDP410B |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
73 |
NDP410BE |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
74 |
S1T2410B01 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
75 |
S1T2410B01-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
76 |
S1T2410B02 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
77 |
S1T2410B02-D0B0 |
bipolar integrated circuit designed as telephone bell replacement |
Samsung Electronic |
78 |
SERCON410B |
SERCOS INTERFACE CONTROLLER |
SGS Thomson Microelectronics |
79 |
SERCON410B |
SERCOS INTERFACE CONTROLLER |
ST Microelectronics |
80 |
SERCON410B,-SERCOS |
INTERFACE CONTROLLER |
SGS Thomson Microelectronics |
81 |
SI4410BDY |
N-Channel 30-V (D-S) MOSFET |
Vishay |
82 |
SI4410BDY-T1 |
N-Channel 30-V (D-S) MOSFET |
Vishay |
83 |
SI9410BDY |
N-Channel 30-V (D-S) MOSFET |
Vishay |
84 |
SI9410BDY-T1 |
N-Channel 30-V (D-S) MOSFET |
Vishay |
85 |
STLC2410B |
BLUETOOTH BASEBAND |
SGS Thomson Microelectronics |
86 |
T6410B |
TRIACS |
Motorola |
87 |
TC7410BP |
Triple 4-Input positive NAND gate - maintenance-discontinued type numbers - replacement TC4023BP |
TOSHIBA |
88 |
TTD1410B |
Power transistor for high-speed switching applications |
TOSHIBA |
89 |
VRE410BD |
Precision dual reference |
THALER CORPORATION |
90 |
VRE410BS |
Precision dual reference |
THALER CORPORATION |
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