| No. |
Part Name |
Description |
Manufacturer |
| 61 |
D44C10 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 62 |
D44C10 |
POWER TRANSISTORS(4A,30-80V,30W) |
MOSPEC Semiconductor |
| 63 |
D44C10 |
Trans GP BJT NPN 80V 6A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 64 |
IR062HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 65 |
IR082HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 66 |
K3N4C1000D-D(G)C, K3N4C1000D-TC(E) |
8M-Bit (1M x 8/512K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 67 |
K3N4C1000D-D(G)C, K3N4C1000D-TC(E) |
8M-Bit (1M x 8/512K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 68 |
K3N4C1000D-D(G)C, K3N4C1000D-TC(E) |
8M-Bit (1M x 8/512K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 69 |
K3N4C1000D-D(G)C, K3N4C1000D-TC(E) |
8M-Bit (1M x 8/512K x 16) CMOS MASK ROM Data Sheet |
Samsung Electronic |
| 70 |
KM44C1000D |
1M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 71 |
KM44C1000DJ-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 72 |
KM44C1000DJ-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 73 |
KM44C1000DJ-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 74 |
KM44C1000DJL-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 75 |
KM44C1000DJL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 76 |
KM44C1000DJL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 77 |
KM44C1000DT-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 78 |
KM44C1000DT-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 79 |
KM44C1000DT-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 80 |
KM44C1000DTL-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 81 |
KM44C1000DTL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 82 |
KM44C1000DTL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 83 |
LHF04C10 |
4Mbit Flash Memory |
SHARP |
| 84 |
LZ34C10 |
1/4-type Color CMOS Image Sensor with 110 k Pixels |
SHARP |
| 85 |
M58CR064C10ZB6T |
64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory |
SGS Thomson Microelectronics |
| 86 |
M58CR064C10ZB6T |
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory |
ST Microelectronics |
| 87 |
M58MR064C100ZC6T |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
ST Microelectronics |
| 88 |
MM54C10 |
Triple 3-Input NAND Gate |
National Semiconductor |
| 89 |
MM74C10 |
Quad 2-Input NAND Gate / Quad 2-Input NOR Gate / Hex Inverter / Triple 3-Input NAND Gate / Dual 4-Input NAND Gate |
National Semiconductor |
| 90 |
MT4C1004J |
4 MEG x 1 DRAM FAST PAGE MODE |
Austin Semiconductor |
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