| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HYB5116405BJ-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 62 |
HYB5116405BJ-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 63 |
HYB5116405BJ-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 64 |
HYB5116405BJBT-50 |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 65 |
HYB5116405BJBT-50 |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 66 |
HYB5116405BT-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 67 |
HYB5116405BT-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 68 |
HYB5116405BT-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 69 |
HYB5117400BJ-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 70 |
HYB5117400BJ-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 71 |
HYB5117405BJ-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 72 |
HYB5117405BJ-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 73 |
HYB5117405BJ-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 74 |
HYB5117405BT-50 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 75 |
HYB5117405BT-60 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 76 |
HYB5117405BT-70 |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
Siemens |
| 77 |
HYB5118165BJ-50 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh |
Siemens |
| 78 |
HYB5118165BJ-60 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh |
Siemens |
| 79 |
HYB5118165BJ-70 |
1M x 16-Bit Dynamic RAM 1k & 4k Refresh |
Siemens |
| 80 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 81 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 82 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 83 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 84 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 85 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 86 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 87 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 88 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 89 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 90 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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