| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IC61SF51218D-8.5TQI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 62 |
IC61SF51218D-9.5B |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 63 |
IC61SF51218D-9.5BI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 64 |
IC61SF51218D-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 65 |
IC61SF51218D-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 66 |
IC61SF51218T-6.5TQ |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 67 |
IC61SF51218T-6.5TQI |
6.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 68 |
IC61SF51218T-7.5TQ |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 69 |
IC61SF51218T-7.5TQI |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 70 |
IC61SF51218T-8.5TQ |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 71 |
IC61SF51218T-8.5TQI |
8.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 72 |
IC61SF51218T-9.5TQ |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 73 |
IC61SF51218T-9.5TQI |
9.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 74 |
TC1015-3.3VCT |
100mA CMOS LDOs with shutdown and reference bypass, output voltages: 3.3V |
Microchip |
| 75 |
TC1015-3.3VCT |
100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3 V. |
TelCom Semiconductor |
| 76 |
TC1015-3.3VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 77 |
TC1055-3.3VCT |
100mA CMOS LDOs with shutdown and ERROR output, output voltage 3.3 V |
Microchip |
| 78 |
TC1055-3.3VCT |
100mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 3.3 V. |
TelCom Semiconductor |
| 79 |
TC1055-3.3VCT713 |
The TC1054, TC1055, and TC1186 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. ... |
Microchip |
| 80 |
TC1185-3.3VCT |
150mA CMOS LDOs with shutdown and reference bypass, output voltages: 3.3V |
Microchip |
| 81 |
TC1185-3.3VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 82 |
TC1265-3.3VAT |
The TC1265 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated ... |
Microchip |
| 83 |
TC1265-3.3VET |
800 mA Fixed-Output CMOS LDO with Shutdown |
Microchip |
| 84 |
TC1265-3.3VETTR |
The TC1265 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated ... |
Microchip |
| 85 |
TC1265-3.3VOA |
The TC1265 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated ... |
Microchip |
| 86 |
TC1265-3.3VOATR |
The TC1265 is a fixed output, high accuracy (typically ±0.5%) CMOS low dropout regulator. Designed specifically for battery-operated ... |
Microchip |
| 87 |
TC2015-3.3VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 88 |
TC2015-3.3VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 89 |
TC2055-3.3VCTTR |
The TC2054, TC2055, and TC2186 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators. ... |
Microchip |
| 90 |
TC2185-3.3VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
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