No. |
Part Name |
Description |
Manufacturer |
61 |
KM416C256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
62 |
KM416C256DT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V |
Samsung Electronic |
63 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
64 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
65 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
66 |
KM416V1004CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
67 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
68 |
KM416V1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
69 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
70 |
KM416V1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
71 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
72 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
73 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
74 |
KM416V254DTL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
75 |
KM416V256DJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
76 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
77 |
KM416V256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
78 |
KM416V256DT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V |
Samsung Electronic |
79 |
KM416V4000BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
80 |
KM416V4000CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
81 |
KM416V4004BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
82 |
KM416V4004BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
83 |
KM416V4004CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
84 |
KM416V4100BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
85 |
KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
86 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
87 |
KM416V4104CS-L50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
88 |
LC3517A-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
89 |
LC3517AL-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
90 |
LC3517AM-15 |
150ns, 2048-word x 8-bit CMOS static RAM (SRAM) |
SANYO |
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