No. |
Part Name |
Description |
Manufacturer |
61 |
HS1-5104ARH-Q |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
62 |
HS1-5104ARH-T |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
63 |
HS9-5104ARH |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
64 |
HS9-5104ARH-Q |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
65 |
HS9-5104ARH-T |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
66 |
I5104E |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
67 |
I5104EI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
68 |
I5104S |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
69 |
I5104SI |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
70 |
I5104X |
SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY |
Winbond Electronics |
71 |
IRFH5104 |
40V Single N-Channel HEXFET Power MOSFET in a PQFN package |
International Rectifier |
72 |
IRFH5104TR2PBF |
40V Single N-Channel HEXFET Power MOSFET in a PQFN package |
International Rectifier |
73 |
IRFH5104TRPBF |
40V Single N-Channel HEXFET Power MOSFET in a PQFN package |
International Rectifier |
74 |
J5104 |
Diode Current Reg. 50V 4.3mA 2-Pin TO-92 |
New Jersey Semiconductor |
75 |
JM38510/65104BCA |
Dual 4-Input Positive-NOR Gates |
Texas Instruments |
76 |
K4H510438 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
77 |
K4H510438A-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
78 |
K4H510438A-TCA2 |
128Mb DDR SDRAM |
Samsung Electronic |
79 |
K4H510438A-TCB0 |
128Mb DDR SDRAM |
Samsung Electronic |
80 |
K4H510438A-TLA0 |
128Mb DDR SDRAM |
Samsung Electronic |
81 |
K4H510438A-TLA2 |
128Mb DDR SDRAM |
Samsung Electronic |
82 |
K4H510438A-TLB0 |
128Mb DDR SDRAM |
Samsung Electronic |
83 |
K4H510438B-GC/LA2 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
84 |
K4H510438B-GC/LB0 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
85 |
K4H510438B-GC/LB3 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
86 |
K4H510438B-GC/LCC |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
87 |
K4H510438B-TC/LA2 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
88 |
K4H510438B-TC/LB0 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
89 |
K4H510438B-TC/LB3 |
512Mb B-die DDR SDRAM Specification |
Samsung Electronic |
90 |
K4H510438B-TCA0 |
128Mb DDR SDRAM |
Samsung Electronic |
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