No. |
Part Name |
Description |
Manufacturer |
61 |
EL5161ICZ-T7A |
200MHz Low-Power Current Feedback Amplifiers |
Intersil |
62 |
EL5161IW-T7 |
200MHz Low-Power Current Feedback Amplifiers |
Intersil |
63 |
EL5161IW-T7A |
200MHz Low-Power Current Feedback Amplifiers |
Intersil |
64 |
EL5161IWZ-T7 |
200MHz Low-Power Current Feedback Amplifiers |
Intersil |
65 |
EL5161IWZ-T7A |
200MHz Low-Power Current Feedback Amplifiers |
Intersil |
66 |
EM565161 |
512K x 16 Low Power SRAM |
Etron Tech |
67 |
EM565161BA-55 |
512K x 16 Low Power SRAM |
Etron Tech |
68 |
EM565161BA-55E |
512K x 16 Low Power SRAM |
Etron Tech |
69 |
EM565161BA-70 |
512K x 16 Low Power SRAM |
Etron Tech |
70 |
EM565161BA-70E |
512K x 16 Low Power SRAM |
Etron Tech |
71 |
EM565161BJ-55 |
512K x 16 Low Power SRAM |
Etron Tech |
72 |
EM565161BJ-70 |
512K x 16 Low Power SRAM |
Etron Tech |
73 |
HB5425161BTT-10 |
256M; 100MHz LVTTL interface SDRAM |
Elpida Memory |
74 |
HB5425161BTT-75A |
256M; 133MHz LVTTL interface SDRAM |
Elpida Memory |
75 |
HB5425161BTT-75B |
256M; 133MHz LVTTL interface SDRAM |
Elpida Memory |
76 |
HD75161A |
Octal General Purpose Interface Bus Transceivers |
Hitachi Semiconductor |
77 |
HD75161A |
ASSP>ICs for Interface |
Renesas |
78 |
HM5425161B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
79 |
HM5425161BTT-10 |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
80 |
HM5425161BTT-75A |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
81 |
HM5425161BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
82 |
HMM5161B |
ZENER DIODES |
Hi-Sincerity Microelectronics |
83 |
JN5161 |
RF4CE and IEEE802.15.4 wireless microcontroller with 64 kB Flash, 8 kB RAM |
NXP Semiconductors |
84 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
85 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
86 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
87 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
88 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
89 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
90 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
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