| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ERG2DJ154P |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 62 |
ERG3DG154P |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 63 |
ERG3DG754P |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 64 |
ERG3DJ154P |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 65 |
ERG3DJ754P |
Leaded, Anti-Pulse Power Resistors |
Panasonic |
| 66 |
FDC654P |
Single P-Channel Logic Level PowerTrench MOSFET |
Fairchild Semiconductor |
| 67 |
FDC654P_NF073 |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 68 |
FDC654P_NL |
P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 69 |
FDW254P |
P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 70 |
FDW254PZ |
P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 71 |
FDW254P_NL |
P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 72 |
FDW254P_Q |
P-Channel 1.8V Specified PowerTrench MOSFET |
Fairchild Semiconductor |
| 73 |
FDZ2554P |
Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET |
Fairchild Semiconductor |
| 74 |
FDZ2554PZ |
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
Fairchild Semiconductor |
| 75 |
IDT821054PQF |
4 Channel PCM CODEC, MPI Interface, 5.0V |
IDT |
| 76 |
IRF7754PBF |
-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package |
International Rectifier |
| 77 |
IRF7854PBF |
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package |
International Rectifier |
| 78 |
IRFP054PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 79 |
IRFP254PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 80 |
ISO254P |
Precision, Powered, Three-Port Isolated PROGRAMMABLE GAIN AMPLIFIER |
Burr Brown |
| 81 |
K4S560432E-NC |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 82 |
K4S560432E-NC(L)75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 83 |
K4S560432E-NC75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 84 |
K4S560432E-NL75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 85 |
K4S560832E-NC(L)75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 86 |
K4S560832E-NC75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 87 |
K4S560832E-NL75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 88 |
K4S561632E |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 89 |
K4S561632E-NC(L)60 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| 90 |
K4S561632E-NC(L)75 |
256Mb E-die SDRAM Specification 54pin sTSOP-II |
Samsung Electronic |
| | | |
