No. |
Part Name |
Description |
Manufacturer |
61 |
2N3550 |
Silicon PNP Transistor |
Motorola |
62 |
2N3550 |
PNP Transistor - low level AMPS |
National Semiconductor |
63 |
2N550 |
Silicon NPN Transistor |
Motorola |
64 |
2N550 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
65 |
2N5505 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
66 |
2N5505 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
67 |
2N5506 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
68 |
2N5506 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
69 |
2N5507 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
70 |
2N5507 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
71 |
2N5508 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
72 |
2N5508 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
73 |
2N5509 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
74 |
2N5509 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
75 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
76 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
77 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
78 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
79 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
80 |
2N5550 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
81 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
82 |
2N5550 |
Amplifier Transistors |
Motorola |
83 |
2N5550 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
84 |
2N5550 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
85 |
2N5550 |
Small Signal Amplifier NPN |
ON Semiconductor |
86 |
2N5550 |
NPN high-voltage transistors |
Philips |
87 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
88 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
89 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
90 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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