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Datasheets for 550

Datasheets found :: 6697
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No. Part Name Description Manufacturer
61 2N3550 Silicon PNP Transistor Motorola
62 2N3550 PNP Transistor - low level AMPS National Semiconductor
63 2N550 Silicon NPN Transistor Motorola
64 2N550 Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk New Jersey Semiconductor
65 2N5505 Monolithic Dual P-Channel Field Effect Transistor General Purpose Amelco Semiconductor
66 2N5505 P-Channel Junction FET (Field-Effect Transistor) Motorola
67 2N5506 Monolithic Dual P-Channel Field Effect Transistor General Purpose Amelco Semiconductor
68 2N5506 P-Channel Junction FET (Field-Effect Transistor) Motorola
69 2N5507 Monolithic Dual P-Channel Field Effect Transistor General Purpose Amelco Semiconductor
70 2N5507 P-Channel Junction FET (Field-Effect Transistor) Motorola
71 2N5508 Monolithic Dual P-Channel Field Effect Transistor General Purpose Amelco Semiconductor
72 2N5508 P-Channel Junction FET (Field-Effect Transistor) Motorola
73 2N5509 Monolithic Dual P-Channel Field Effect Transistor General Purpose Amelco Semiconductor
74 2N5509 P-Channel Junction FET (Field-Effect Transistor) Motorola
75 2N5550 Leaded Small Signal Transistor General Purpose Central Semiconductor
76 2N5550 0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE Continental Device India Limited
77 2N5550 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
78 2N5550 NPN Silicon Epitaxial Planar Transistor Honey Technology
79 2N5550 High Voltage Transistor Korea Electronics (KEC)
80 2N5550 TO-92 Plastic-Encapsulate Biploar Transistors Micro Commercial Components
81 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
82 2N5550 Amplifier Transistors Motorola
83 2N5550 NPN Transistor - General Purpose AMPS and Switches National Semiconductor
84 2N5550 Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box New Jersey Semiconductor
85 2N5550 Small Signal Amplifier NPN ON Semiconductor
86 2N5550 NPN high-voltage transistors Philips
87 2N5550 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
88 2N5550 NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications Semtech
89 2N5550 Silicon NPN epitaxial transistor (PCT Process) TOSHIBA
90 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 6697
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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