| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5712-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
| 62 |
1N5712-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 63 |
1N5712-1E3 |
Si Schottky Rectifier Diodes |
Microsemi |
| 64 |
1N5712UB |
Si Schottky Rectifier Diodes |
Microsemi |
| 65 |
1N5712UBCA |
Si Schottky Rectifier Diodes |
Microsemi |
| 66 |
1N5712UBCC |
Si Schottky Rectifier Diodes |
Microsemi |
| 67 |
1N5712UBD |
Si Schottky Rectifier Diodes |
Microsemi |
| 68 |
1N5712UR-1 |
SCHOTTKY BARRIER DIODES |
Compensated Devices Incorporated |
| 69 |
1N5712UR-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 70 |
1N5719 |
SILICON PIN DIODE |
Advanced Semiconductor |
| 71 |
1N5719 |
Diode PIN Attenuator/Switch 150V 2-Pin Case 15 Bag |
New Jersey Semiconductor |
| 72 |
1S1571 |
VARACTOR DIODE |
TOSHIBA |
| 73 |
1S1571 |
Varactor diode |
TOSHIBA |
| 74 |
2722 162 02571 |
Circulators/Isolators 1700 to 2100 MHz |
Philips |
| 75 |
2722 162 05571 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 76 |
2N2571 |
Silicon NPN Transistor |
Motorola |
| 77 |
2N3571 |
High frequency NPN transistor |
FERRANTI |
| 78 |
2N3571 |
Silicon NPN Transistor |
Motorola |
| 79 |
2N3571 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 80 |
2N3571 |
NPN Silicon Transistor |
Texas Instruments |
| 81 |
2N5571 |
Silicon Bidirectional Thyristor (triac) 15A RMS |
Motorola |
| 82 |
2N5571 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
Motorola |
| 83 |
2N5571 |
15A Silicon Triac |
RCA Solid State |
| 84 |
2N571 |
Germanium PNP Transistor |
Motorola |
| 85 |
2N5710 |
RF transistor |
Texas Instruments |
| 86 |
2N5711 |
RF transistor |
Texas Instruments |
| 87 |
2N5712 |
RF transistor |
Texas Instruments |
| 88 |
2N5713 |
RF transistor |
Texas Instruments |
| 89 |
2N5716 |
Silicon low noise N-Channel Junction Field-Effect Transistor |
Motorola |
| 90 |
2N5717 |
Silicon low noise N-Channel Junction Field-Effect Transistor |
Motorola |
| | | |
