| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5833 |
Diode Schottky 30V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 62 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 63 |
1N5833A |
Diode Schottky 30V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 64 |
1N5833R |
High Power Schottky Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 65 |
1N5834 |
High Power Schottky Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 66 |
1N5834 |
Schottky Rectifier |
Microsemi |
| 67 |
1N5834 |
Schottky barrier rectifier 40A 40V |
Motorola |
| 68 |
1N5834 |
Diode Schottky 40V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 69 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 70 |
1N5834A |
Diode Schottky 40V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 71 |
1N5834R |
High Power Schottky Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 72 |
1N5837A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 2.4V |
Motorola |
| 73 |
1N5838A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 2.5V |
Motorola |
| 74 |
1N5839A |
500mW UNIBLOC silicon oxide-passivated zener regulator diode 2.7V |
Motorola |
| 75 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 76 |
232257312583 |
Surface Mount Multilayer Varistors |
Vishay |
| 77 |
2N2583 |
Silicon NPN Transistor |
Motorola |
| 78 |
2N3583 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 79 |
2N3583 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 80 |
2N3583 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
| 81 |
2N3583 |
NPN Transistor |
Microsemi |
| 82 |
2N3583 |
POWER TRANSISTORS(35W) |
MOSPEC Semiconductor |
| 83 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
| 84 |
2N3583 |
Silicon NPN Transistor |
Motorola |
| 85 |
2N3583 |
Trans GP BJT NPN 175V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
| 86 |
2N3583 |
NPN Power Transistor Triple Diffused - Fast switching |
SESCOSEM |
| 87 |
2N3583 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement 2N6211 |
Silicon Transistor Corporation |
| 88 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
| 89 |
2N5583 |
Bipolar Transistor |
New Jersey Semiconductor |
| 90 |
2N583 |
Germanium PNP Transistor |
Motorola |
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