| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AMS1004-2.5AS |
2.5V Two-terminal micropower band-gap voltage reference diode |
Advanced Monolithic Systems |
| 62 |
AMS1004-25AS |
MICROPOWER VOLTAGE REFERENCE |
Advanced Monolithic Systems |
| 63 |
AMS285-2.5AS |
2.5V Micropower voltage reference diode |
Advanced Monolithic Systems |
| 64 |
AMS285-25AS |
MICROPOWER VOLTAGE REFERENCE DIODE |
Advanced Monolithic Systems |
| 65 |
AMS285AS |
ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE |
Advanced Monolithic Systems |
| 66 |
AMS385-2.5AS |
2.5V Micropower voltage reference diode |
Advanced Monolithic Systems |
| 67 |
AMS385-25AS |
MICROPOWER VOLTAGE REFERENCE DIODE |
Advanced Monolithic Systems |
| 68 |
AMS385AS |
ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE |
Advanced Monolithic Systems |
| 69 |
BA7765AS |
NORMAL AUDIO SIGNAL PROCESSINGS |
ROHM |
| 70 |
BCR5AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 71 |
BCR5AS |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 72 |
BCR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 73 |
BCR5AS-12 |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 74 |
BCR5AS-12L |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 75 |
BCR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 76 |
BCR5AS-8L |
Surface Mount Triac 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 77 |
BD645AS |
Trans Darlington NPN 60V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 78 |
BD675AS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 79 |
BDV65AS |
Trans Darlington NPN 80V 12A 3-Pin(3+Tab) SOT-93 |
New Jersey Semiconductor |
| 80 |
CG6235AS |
MPEG Clock Generator with VCXO |
Cypress |
| 81 |
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 82 |
CR05AS-4 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 83 |
CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 84 |
CR5AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 85 |
CR5AS |
Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 86 |
CR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 87 |
CR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 88 |
CR5AS400-12 |
Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 89 |
CR5AS400-8 |
Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 90 |
CR5AS600-12 |
Surface Mount, Phase Control SCR 5 Amperes/400-600 Volts |
Powerex Power Semiconductors |
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