| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5246 |
500 mW silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
| 62 |
1N5246B |
16.0V 500 mW Zener Diode |
Continental Device India Limited |
| 63 |
1N5258B |
36.0V 500 mW Zener Diode |
Continental Device India Limited |
| 64 |
1N5340 |
Zener Diode 6.0V 5W |
Motorola |
| 65 |
1N5340A |
Zener Diode 6.0V 5W |
Motorola |
| 66 |
1N5340B |
Zener Diode 6.0V 5W |
Motorola |
| 67 |
1N5340B |
Zener 6.0V 5W 5% |
ON Semiconductor |
| 68 |
1N5340BRL |
Zener 6.0V 5W 5% |
ON Semiconductor |
| 69 |
1N5536 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance. |
Jinan Gude Electronic Device |
| 70 |
1N5536A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 71 |
1N5536B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 72 |
1N5536C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 73 |
1N5630 |
Diode TVS Single Uni-Dir 6.05V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 74 |
1N5741B |
16.0V Voltage Reference Diode |
Philips |
| 75 |
1N5749B |
36.0V Voltage Reference Diode |
Philips |
| 76 |
1N5754B |
56.0V Voltage Reference Diode |
Philips |
| 77 |
1N5944 |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 78 |
1N5944A |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 79 |
1N5944C |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 80 |
1N5944D |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 81 |
1N6268 |
Diode TVS Single Uni-Dir 6.05V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 82 |
1N6268C |
Diode TVS Single Bi-Dir 6.05V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 83 |
1N6373 |
Zener 6.0V 1500W |
ON Semiconductor |
| 84 |
1N6373RL4 |
Zener 6.0V 1500W |
ON Semiconductor |
| 85 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 86 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 87 |
1N966 |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 88 |
1N966 |
500 mW silicon planar zener diode. Max zener voltage 16.0 V. |
Fairchild Semiconductor |
| 89 |
1N966A |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 90 |
1N966B |
16.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
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