| No. |
Part Name |
Description |
Manufacturer |
| 61 |
FQD3N60CTM_WS |
N-Channel QFET� MOSFET 600V, 2.4A, 3.4? |
Fairchild Semiconductor |
| 62 |
FQD5N60CTF |
600V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 63 |
FQD5N60CTM |
600V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 64 |
FQI10N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 65 |
FQI5N60CTU |
600V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 66 |
FQI6N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 67 |
FQI8N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 68 |
FQPF12N60CT |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 69 |
FQU1N60CTU |
600V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 70 |
FQU5N60CTU |
600V N-Channel Advance QFET C-Series |
Fairchild Semiconductor |
| 71 |
FSBB20CH60CT |
Motion SPM� 3 Series |
Fairchild Semiconductor |
| 72 |
FSBB30CH60CT |
Motion SPM� 3 Series |
Fairchild Semiconductor |
| 73 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 74 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 75 |
HM514260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 76 |
HM514260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 77 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 78 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 79 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 80 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 81 |
HYB25D128160CT |
128 Mbit Double Data Rate SDRAM |
Infineon |
| 82 |
HYB25D128160CT-5 |
128Mbit Double Data Rate (DDR) Components |
Infineon |
| 83 |
HYB25D128160CT-6 |
128Mbit Double Data Rate (DDR) Components |
Infineon |
| 84 |
HYB25D256160CT-5 |
256Mbit Double Data Rate (DDR) Components |
Infineon |
| 85 |
HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components |
Infineon |
| 86 |
HYB39S128160CT-7 |
128Mbit Synchronous DRAMs |
Infineon |
| 87 |
HYB39S128160CT-7.5 |
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3 |
Infineon |
| 88 |
HYB39S128160CT-75 |
128-MBit Synchronous DRAM |
Infineon |
| 89 |
HYB39S128160CT-8 |
128-MBit Synchronous DRAM |
Infineon |
| 90 |
HYB39S128160CTL-75 |
128-MBit Synchronous DRAM |
Infineon |
| | | |
