| No. |
Part Name |
Description |
Manufacturer |
| 61 |
FSJ160D1 |
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 62 |
FSJ260D1 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 63 |
FSJ9160D1 |
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 64 |
FSJ9260D1 |
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs |
Intersil |
| 65 |
FSPYC260D1 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 66 |
FSYC160D1 |
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 67 |
FSYC260D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 68 |
FSYC360D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 69 |
FSYC9160D1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
Intersil |
| 70 |
HGTG12N60D1 |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
| 71 |
HGTG12N60D1D |
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
| 72 |
HGTG24N60D1 |
24A/ 600V N-Channel IGBT |
Intersil |
| 73 |
HGTG24N60D1D |
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode |
Intersil |
| 74 |
HGTP12N60D1 |
12A/ 600V N-Channel IGBT |
Intersil |
| 75 |
M36LLR8760D1 |
256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package |
ST Microelectronics |
| 76 |
MX860D1 |
Telephone signaling transceiver |
MXCOM |
| 77 |
S60D100 |
SCHOTTKY BARRIER RECTIFIERS(60A,90-100V) |
MOSPEC Semiconductor |
| 78 |
T74LS260D1 |
DUAL 5 INPUT NOR GATE |
etc |
| 79 |
U60D10 |
POWER RECTIFIERS(60A,50-200V) |
MOSPEC Semiconductor |
| 80 |
U60D15 |
POWER RECTIFIERS(60A,50-200V) |
MOSPEC Semiconductor |
| | | |
