| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MGP7N60ED |
Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
ON Semiconductor |
| 62 |
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 63 |
MGW14N60ED |
Insulated Gate Bipolar Transistor |
ON Semiconductor |
| 64 |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 65 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
| 66 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 67 |
MPC860ED |
Family Hardware Specifications |
Motorola |
| 68 |
MSK4360ED |
500 V, 25A IGBT plus diode fully isolated smart power 3-phase motor drive power hybrid |
M.S. Kennedy Corp. |
| | | |
