No. |
Part Name |
Description |
Manufacturer |
61 |
2DD2652 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
62 |
2DD2652-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
63 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
64 |
2N1652 |
Germanium PNP Transistor |
Motorola |
65 |
2N1652 |
Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
66 |
2N2652 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
67 |
2N2652 |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
68 |
2N2652 |
Silicon NPN Transistor |
Motorola |
69 |
2N2652A |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
70 |
2N2652A |
Dual NPN silicon transistors for use as a differential amplifier |
Motorola |
71 |
2N2652A |
Silicon NPN Transistor |
Motorola |
72 |
2N3652 |
35A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
73 |
2N3652 |
THYRISTOR |
Motorola |
74 |
2N3652 |
Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
75 |
2N3652 |
35A Silicon Controlled Rectifier |
RCA Solid State |
76 |
2N3652 |
Thyristors - fast recoveries series |
SESCOSEM |
77 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
78 |
2N652 |
Germanium PNP Transistor |
Motorola |
79 |
2N652 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
80 |
2N6520 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
81 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
82 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
83 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
84 |
2N6520 |
Ic=500mA, Vce=10V transistor |
MCC |
85 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
86 |
2N6520 |
High voltage PNP transistor |
Motorola |
87 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
88 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
89 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
90 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
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