No. |
Part Name |
Description |
Manufacturer |
61 |
HYB3166165ATL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
62 |
HYB3166165BT-40 |
4M x 16-Bit Dynamic RAM |
Siemens |
63 |
HYB3166165BT-50 |
4M x 16-Bit Dynamic RAM |
Siemens |
64 |
HYB3166165BT-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
65 |
HYB3166165BTL-50 |
4M x 16-Bit Dynamic RAM |
Siemens |
66 |
HYB3166165BTL-60 |
4M x 16-Bit Dynamic RAM |
Siemens |
67 |
IRF6616 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
68 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
69 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
70 |
IRGPS66160D |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
71 |
IRGPS66160DPBF |
600V UltraFast Co-Pack IGBT in a Super 247 (TO274AA) package |
International Rectifier |
72 |
K4E661611D, K4E641611D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
73 |
K4E661612B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
74 |
K4E661612B-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
75 |
K4E661612B-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
76 |
K4E661612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
77 |
K4E661612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
78 |
K4E661612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
79 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
80 |
K4E661612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
81 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
82 |
K4E661612C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
83 |
K4E661612C-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
84 |
K4E661612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
85 |
K4E661612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
86 |
K4E661612C-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
87 |
K4E661612C-L45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
88 |
K4E661612C-L50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
89 |
K4E661612C-L60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
90 |
K4E661612C-T |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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