No. |
Part Name |
Description |
Manufacturer |
61 |
2C5664 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
62 |
2C5664 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
63 |
2DD1664P |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
64 |
2DD1664Q |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
65 |
2DD1664Q-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
66 |
2DD1664R |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
67 |
2N1664 |
Germanium PNP Transistor |
Motorola |
68 |
2N2664 |
Germanium PNP Transistor |
Motorola |
69 |
2N2664 |
Germanium PNP Power Transistor, MT-27 package |
Silicon Transistor Corporation |
70 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
71 |
2N3664 |
Silicon NPN Transistor |
Motorola |
72 |
2N5664 |
NPN Transistor |
Microsemi |
73 |
2N5664 |
Trans GP BJT NPN 200V 5A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
74 |
2N5664 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
75 |
2N5664 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
76 |
2N5664 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
77 |
2N5664 |
Silicon NPN Power Transistor, TO-66 (cont d) package |
Silicon Transistor Corporation |
78 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
79 |
2N5666 |
Chip Type 2C5664 Geometry 9221 Polarity NPN |
Semicoa Semiconductor |
80 |
2N6648 |
Leaded Power Transistor Darlington |
Central Semiconductor |
81 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
82 |
2N6648 |
PNP Darlington Transistor |
Microsemi |
83 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
84 |
2N6648 |
15A peak complementary silicon power darlington PNP transistor |
Motorola |
85 |
2N6648 |
Trans Darlington PNP 40V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
86 |
2N6648E3 |
Darlington Transistors |
Microsemi |
87 |
2N6649 |
Leaded Power Transistor Darlington |
Central Semiconductor |
88 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
89 |
2N6649 |
PNP Darlington Transistor |
Microsemi |
90 |
2N6649 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
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