No. |
Part Name |
Description |
Manufacturer |
61 |
1SMB5945 |
68 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
62 |
1SMB5945A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 68 V. +-10% tolerance. |
Motorola |
63 |
1SMB5945B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 68 V. +-5% tolerance. |
Motorola |
64 |
1SMC5373 |
68 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
65 |
1V040 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
66 |
2V040 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE Electronics |
67 |
CZRA3068 |
3.0 watt surface mount zener diode. Nom zener voltage 68 V. |
Comchip Technology |
68 |
CZRC5373B |
5.0 watt surface mount zener diode. Nom zener voltage 68 V. Tolerance +-5 %. |
Comchip Technology |
69 |
CZRL4760A |
1 watt surface mount zener diode. Nom zener voltage 68 V. Tolerance +-5 %. |
Comchip Technology |
70 |
CZRM27C180PA |
0.8W surface mount zener diode. Vzmin 168 V, Vzmax 191 V, 1%. |
Comchip Technology |
71 |
CZRM27C180PB |
0.8W surface mount zener diode. Vzmin 168 V, Vzmax 191 V, 2%. |
Comchip Technology |
72 |
CZRM27C180PC |
0.8W surface mount zener diode. Vzmin 168 V, Vzmax 191 V, 5%. |
Comchip Technology |
73 |
DE8681 |
Demonstration and Evaluation Kit for CMX868 V.22bis Modem - provides a 'Socket-type Modem' |
CONSUMER MICROCIRCUITS LIMITED |
74 |
F100175 |
-4.68 V to -5.72 V, quint latch 100k in/10k out |
National Semiconductor |
75 |
MZP4760A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 68 V. +-5% tolerance. |
Motorola |
76 |
MZP4760C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 68 V. +-2% tolerance. |
Motorola |
77 |
MZP4760D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 68 V. +-1% tolerance. |
Motorola |
78 |
MZT3001 |
10 watt zener transient suppressor. Nom zener voltage 68 V. |
Motorola |
79 |
MZT3336 |
50 watt zener transient suppressor. Nom zener voltage 68 V. |
Motorola |
80 |
P4KE160A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
81 |
P4KE160CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
82 |
P4KE350CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 332 V, Vbr(max) = 368 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
83 |
P6KE160CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
84 |
P6KE350CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 332 V, Vbr(max) = 368 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
85 |
SMBJ5945A |
1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
86 |
SMBJ5945B |
1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
87 |
SMBJ5945C |
1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
88 |
SMBJ5945D |
1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
89 |
STP80N70F4 |
N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package |
ST Microelectronics |
90 |
STP80N70F6 |
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
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