No. |
Part Name |
Description |
Manufacturer |
61 |
28C256ATC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
62 |
28C256ATC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
63 |
28C256ATC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
64 |
28C256ATC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
65 |
28C256ATI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
66 |
28C256ATI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
67 |
28C256ATI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
68 |
28C256ATI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
69 |
28C256ATI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
70 |
28C256ATI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
71 |
28C256ATI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
72 |
28C256ATI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
73 |
28C256ATM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
74 |
28C256ATM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
75 |
28C256ATM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
76 |
28C256ATM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
77 |
28C256ATM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
78 |
28C256ATM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
79 |
28C256ATM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
80 |
28C256ATM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
81 |
2SA1576AT106 |
PNP General Purpose Amplification Transistor |
ROHM |
82 |
74FCT162646ATPACT |
16-Bit Bus Transceivers and Registers with 3-State Outputs |
Texas Instruments |
83 |
74FCT162646ATPVCG4 |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 |
Texas Instruments |
84 |
74FCT162646ATPVCT |
16-Bit Bus Transceivers and Registers with 3-State Outputs |
Texas Instruments |
85 |
74FCT16646ATPVCG4 |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 |
Texas Instruments |
86 |
74LV06AT14-13 |
HEX INVERTERS WITH SCHMITT TRIGGER INPUTS |
Diodes |
87 |
74LV86AT14-13 |
QUADRUPLE 2-INPUT EXCULSIVE OR GATES |
Diodes |
88 |
74LVC06AT14-13 |
HEX INVERTERS WITH OPEN DRAIN OUTPUTS |
Diodes |
89 |
74LVC126AT14-13 |
QUADRUPLE 3-STATE BUFFERS |
Diodes |
90 |
74LVC126ATTR |
LOW VOLTAGE CMOS QUAD BUS BUFFERS (3-STATE) HIGH PERFORMANCE |
ST Microelectronics |
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