No. |
Part Name |
Description |
Manufacturer |
61 |
M24C16BN3T |
16/8/4/2/1 Kbit Serial IC Bus EEPROM |
ST Microelectronics |
62 |
M24C16BN6T |
16/8/4/2/1 Kbit Serial IC Bus EEPROM |
ST Microelectronics |
63 |
M93C06BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
64 |
M93C46BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
65 |
M93C56BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
66 |
M93C66BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
67 |
M93C76BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
68 |
M93C86BN |
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
ST Microelectronics |
69 |
M93S46BN |
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
ST Microelectronics |
70 |
M93S56BN |
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
ST Microelectronics |
71 |
M93S66BN |
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
ST Microelectronics |
72 |
M95256BN |
256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock |
ST Microelectronics |
73 |
MIC2506BN |
Single 2A / Dual 1A / High-Side Switches |
Micrel Semiconductor |
74 |
MIC4426BN |
Dual 1.5A-Peak Low-Side MOSFET Driver |
Micrel Semiconductor |
75 |
MIC5016BN |
Low-Cost Dual High- or Low-Side MOSFET Driver |
Micrel Semiconductor |
76 |
MIC5156BN |
Super LDO Regulator Controller |
Micrel Semiconductor |
77 |
MR16R0826BN1 |
RAMBUS MODULE |
Samsung Electronic |
78 |
MR16R0826BN1-CG6 |
RAMBUS MODULE |
Samsung Electronic |
79 |
MR16R0826BN1-CK7 |
RAMBUS MODULE |
Samsung Electronic |
80 |
MR16R0826BN1-CK8 |
RAMBUS MODULE |
Samsung Electronic |
81 |
NMC27C256BN15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
82 |
NMC27C256BN150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
83 |
NMC27C256BN20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
84 |
NMC27C256BN200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
85 |
NMC27C256BN25 |
250 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
86 |
NMC27C256BN250 |
250 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
87 |
NMC27C256BNE15 |
150 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
88 |
NMC27C256BNE150 |
150 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
89 |
NMC27C256BNE20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
90 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
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