| No. |
Part Name |
Description |
Manufacturer |
| 61 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 62 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 63 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 64 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
| 65 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 66 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 67 |
KM416V1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 68 |
KM416V1204CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 69 |
KM416V1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 70 |
KM416V1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
| 71 |
KM41C4000DJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 72 |
KM41C4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 73 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 74 |
KM41C4000DT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
| 75 |
KM41C4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
| 76 |
KM41C4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
| 77 |
KM41V4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 78 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 79 |
KM41V4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
| 80 |
KM41V4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
| 81 |
LTC1740 |
14-Bit, 6Msps, Sampling ADC |
Linear Technology |
| 82 |
LTC2369-18 |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 83 |
LTC2369CDE-18#PBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 84 |
LTC2369CDE-18#TRPBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 85 |
LTC2369CMS-18#PBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 86 |
LTC2369CMS-18#TRPBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 87 |
LTC2369HMS-18#PBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 88 |
LTC2369HMS-18#TRPBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 89 |
LTC2369IDE-18#PBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
| 90 |
LTC2369IDE-18#TRPBF |
18-Bit, 1.6Msps, Pseudo- Differential Unipolar SAR ADC with 96.5dB SNR |
Linear Technology |
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