| No. |
Part Name |
Description |
Manufacturer |
| 61 |
15KP120C |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 62 |
15KP170 |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 63 |
15KP170A |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 64 |
15KP170C |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A. |
Panjit International Inc |
| 65 |
15KP170CA |
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A. |
Panjit International Inc |
| 66 |
1703050306 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
| 67 |
1703070101 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
| 68 |
1703100260 |
Socket 370 SBC with Gigabit LAN, USB2.0, VGA/LCD and Audio |
Advantech |
| 69 |
1BQ20 |
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 70 |
1BQ40 |
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package |
International Rectifier |
| 71 |
1N111 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 72 |
1N112 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 73 |
1N113 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 74 |
1N114 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 75 |
1N115 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 76 |
1N192 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 77 |
1N294 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 78 |
1N294A |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 79 |
1N298 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 80 |
1N4370 (DO7) |
Zener Voltage Regulator Diode |
Microsemi |
| 81 |
1N451 |
170 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 82 |
1N4766A |
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V. |
Motorola |
| 83 |
1N4771A |
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V. |
Motorola |
| 84 |
1N5194 |
70 V, 500 mW silicon diode |
BKC International Electronics |
| 85 |
1N5278AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 170 V. Tolerance +-10%. |
Microsemi |
| 86 |
1N5278BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 170 V. Tolerance +-5%. |
Microsemi |
| 87 |
1N5278UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 170 V. |
Microsemi |
| 88 |
1N5354B |
17 V, 70 mA, 5 W glass passivated zener diode |
Fagor |
| 89 |
1N5385B |
170 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
| 90 |
1N5385B |
170 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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