No. |
Part Name |
Description |
Manufacturer |
61 |
DM74S287AJ |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
62 |
DM74S287AN |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
63 |
DM74S287AV |
30 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
64 |
DM74S287J |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
65 |
DM74S287N |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
66 |
DM74S287V |
50 ns, (256 x 4) 1024-bit TTL PROM |
National Semiconductor |
67 |
DM74S288 |
256-BIT TTL PROM |
National Semiconductor |
68 |
DM74S288AJ |
256-BIT TTL PROM |
National Semiconductor |
69 |
DM74S288AN |
256-BIT TTL PROM |
National Semiconductor |
70 |
DM74S288AV |
256-BIT TTL PROM |
National Semiconductor |
71 |
DM74S288J |
256-BIT TTL PROM |
National Semiconductor |
72 |
DM74S288N |
256-BIT TTL PROM |
National Semiconductor |
73 |
DM74S288N |
256-BIT TTL PROM |
National Semiconductor |
74 |
DM74S288V |
256-BIT TTL PROM |
National Semiconductor |
75 |
DM74S289J |
4.75 V to 5.25 V, 64-bit (16 x 4) open-collector RAM TRI-STATE RAM |
National Semiconductor |
76 |
DM74S289N |
4.75 V to 5.25 V, 64-bit (16 x 4) open-collector RAM TRI-STATE RAM |
National Semiconductor |
77 |
DM74S299 |
3-STATE 8-Bit Universal Shift/Storage Register |
Fairchild Semiconductor |
78 |
DM74S299 |
TRI-STATE 8-Bit Universal Shift/Storage Register |
National Semiconductor |
79 |
DM74S299N |
3-STATE 8-Bit Universal Shift/Storage Register |
Fairchild Semiconductor |
80 |
DM74S299N |
7 V, TRI-STATE 8-bit universal shift/storage register |
National Semiconductor |
81 |
GTH111/74S20 |
Dual 4-input NAND gate |
Mullard |
82 |
IDT71B74S20TP |
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM |
IDT |
83 |
IDT71B74S20Y |
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM |
IDT |
84 |
M374S2953MTS |
128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
85 |
MH74S201 |
RAM memory 256 bits |
Tesla Elektronicke |
86 |
MH74S201E |
RAM memory 256 bits |
Tesla Elektronicke |
87 |
MH74S287 |
Bipolar PROM 256 x 4 |
Tesla Elektronicke |
88 |
MH74S287 |
Entering the contents of the PROM memory |
Tesla Elektronicke |
89 |
MH74S287 |
Programmable memory PROM 256 bits |
Tesla Elektronicke |
90 |
N74S20 |
Dual 4-input positive NAND gate |
Signetics |
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