| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4760DP/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 62 |
1N4760DP/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 63 |
1N4760DPe3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 64 |
1N4760DPe3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 65 |
1N4760P/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 66 |
1N4760P/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 67 |
1N4760Pe3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 68 |
1N4760Pe3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 69 |
1N5760 |
Silicon 3-layer bilateral trigger |
Motorola |
| 70 |
1N5760A |
Silicon 3-layer bilateral trigger |
Motorola |
| 71 |
1N6760 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 72 |
1N6760 |
Schottky Rectifier |
Microsemi |
| 73 |
1N6760-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 74 |
1N6760-1e3 |
Si Schottky Rectifier Diodes |
Microsemi |
| 75 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 76 |
1SMA4760 |
Zener: |
Taiwan Semiconductor |
| 77 |
1SMA4760 |
68 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 78 |
1SMA4760 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 79 |
2722 162 02541 |
Circulators/Isolators 1760 to 1940 MHz |
Philips |
| 80 |
2722 162 02651 |
Circulators/Isolators 1760 to 1940 MHz |
Philips |
| 81 |
2N1760 |
Germanium PNP Transistor |
Motorola |
| 82 |
2N1760 |
Germanium PNP Power Transistor, MS7 (spacesaver) Package |
Silicon Transistor Corporation |
| 83 |
2N2760 |
Silicon NPN Transistor |
Motorola |
| 84 |
2N3760 |
THYRISTOR |
Motorola |
| 85 |
2N5760 |
High-Voltage, High-Power NPN silicon transistor 6A |
Motorola |
| 86 |
2N5760 |
NPN Power Transistor TO-3 |
National Semiconductor |
| 87 |
2N5760 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 88 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 89 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 90 |
2N6760 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
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