| No. |
Part Name |
Description |
Manufacturer |
| 61 |
K7N803645B-QC13 |
256Kx36 & 512Kx18-Bit Pipelined NtRAM |
Samsung Electronic |
| 62 |
K7N803645B-QC16 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
| 63 |
K7N803645B-QC16/13 |
256Kx36 & 512Kx18-Bit Flow Through NtRAM |
Samsung Electronic |
| 64 |
K7N803645M |
256Kx36 & 512Kx18 Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 65 |
K7N803649A |
256Kx36Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 66 |
K7N803649B K7N803249B K7N801849B |
256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 67 |
K7N803649B K7N803249B K7N801849B |
256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 68 |
K7N803649B K7N803249B K7N801849B |
256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 69 |
K7N803649B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
| 70 |
KF7N80F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 71 |
MTW7N80E |
TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM |
Motorola |
| 72 |
MTW7N80E |
OBSOLETE - Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
| 73 |
MTW7N80E-D |
Power MOSFET 7 Amps, 800 Volts |
ON Semiconductor |
| 74 |
PC357N8T |
PHOTOCOUPLER |
SHARP |
| 75 |
SPA17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 76 |
SPB17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 77 |
SPP17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 78 |
SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 79 |
STD7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 80 |
STF7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 81 |
STFI7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 82 |
STL7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 3.6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package |
ST Microelectronics |
| 83 |
STP7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 84 |
STU7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 85 |
ZXMHC10A07N8 |
100V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE |
Diodes |
| 86 |
ZXMHC10A07N8TC |
100V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE |
Diodes |
| 87 |
ZXMHC6A07N8 |
60V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE |
Diodes |
| 88 |
ZXMHC6A07N8TC |
60V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE |
Diodes |
| 89 |
ZXMP3F37N8 |
30V SO8 P-channel enhancement mode MOSFET |
Diodes |
| 90 |
ZXMP3F37N8TA |
30V SO8 P-channel enhancement mode MOSFET |
Diodes |
| | | |
