Datasheets for 8 X 3

Datasheets found :: 110 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
61	IS61SF12836-8.5BI	8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
62	IS61SF12836-8.5TQ	8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
63	IS61SF12836-8.5TQI	8.5ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
64	IS61SF12836-8B	8ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
65	IS61SF12836-8BI	8ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
66	IS61SF12836-8TQ	8ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
67	IS61SF12836-8TQI	8ns; 3.3V; 128 x 36 synchronous flow-through static RAM	ICSI
68	K4R271869B-MCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
69	K4R271869B-MCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
70	K4R271869B-MCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
71	K4R271869B-NCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
72	K4R271869B-NCK7	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
73	K4R271869B-NCK8	256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
74	K4R441869AM-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
75	K4R441869AM-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
76	K4R441869AM-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
77	K4R441869AN-CG6	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
78	K4R441869AN-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
79	K4R441869AN-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
80	KM418RD8AC-RG60	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).	Samsung Electronic
81	KM418RD8AC-RK70	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).	Samsung Electronic
82	KM418RD8AC-RK80	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).	Samsung Electronic
83	KM418RD8AD-RG60	256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz).	Samsung Electronic
84	KM418RD8AD-RK70	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).	Samsung Electronic
85	KM418RD8AD-RK80	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).	Samsung Electronic
86	NJU7370F	8 X 32 ANALOG CROSS POINT SWITCH	New Japan Radio
87	SN74ACT3651	2048 x 36 synchronous FIFO Memory	Texas Instruments
88	SN74ACT3651-15PCB	2048 x 36 synchronous FIFO Memory	Texas Instruments
89	SN74ACT3651-15PQ	2048 x 36 synchronous FIFO Memory	Texas Instruments
90	SN74ACT3651-20PCB	2048 x 36 synchronous FIFO Memory	Texas Instruments

Datasheets found :: 110 Page: | 1 | 2 | 3 | 4 |