No. |
Part Name |
Description |
Manufacturer |
61 |
1N6288AE3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
62 |
1N6288ARL4 |
Zener 51V 1500W 5% |
ON Semiconductor |
63 |
1N988A |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. |
Jinan Gude Electronic Device |
64 |
1N988A |
130 V, zener diode |
Leshan Radio Company |
65 |
1N988A |
Zener Voltage Regulator Diode |
Microsemi |
66 |
1N988A |
400mW Zener Diode |
Motorola |
67 |
1N988A |
Zener Diode 130V |
Motorola |
68 |
1S1888A |
Rectifiers Silicon Diffused Type General Purpose Rectifier Applications |
TOSHIBA |
69 |
20KP88A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
70 |
2N188A |
Germanium PNP Transistor |
Motorola |
71 |
2N2988A |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
New Jersey Semiconductor |
72 |
2N3088A |
N-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
73 |
2N388A |
Germanium NPN Transistor |
Motorola |
74 |
2N588A |
Germanium PNP Transistor |
Motorola |
75 |
2N688A |
Leaded Thyristor SCR |
Central Semiconductor |
76 |
2N688A |
THYRISTOR |
Motorola |
77 |
2N688A |
Thyristor SCR 400V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
78 |
2N888A |
SCRs (Silicon Controlled Rectifiers) |
New Jersey Semiconductor |
79 |
2SA1488A |
Silicon PNP Transistor |
Sanken |
80 |
2SA1488A |
Silicon PNP Power Transistors TO-220F package |
Savantic |
81 |
2SC288A(5.B) |
NPN Silicon Transistor |
NEC |
82 |
2SC388A |
Silicon NPN epitaxial planar transistor, TV Picture IF Final stage Amplifire Applications |
TOSHIBA |
83 |
2SC388ATM |
Silicon NPN transistor for TV final picture IF amplifier applications |
TOSHIBA |
84 |
2SC4288A |
2SC4288A |
Unknow |
85 |
2SC4288A |
2SC4288A |
Unknow |
86 |
2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP |
ON Semiconductor |
87 |
30KP288A |
TRANSIENT VOLTAGE SUPPRESSORS |
Micro Commercial Components |
88 |
30KPA288A |
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
89 |
30KPA288Ae3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
90 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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