| No. |
Part Name |
Description |
Manufacturer |
| 61 |
D358N600 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 62 |
D358N600 |
358A 600V Power Rectifier Diode |
IPRS Baneasa |
| 63 |
D408N600 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 64 |
D408N600 |
408A 600 Power Rectifier Diode |
IPRS Baneasa |
| 65 |
D448N600 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 66 |
D798N600 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 67 |
FDPF8N60ZUT |
N-Channel UniFETTM Ultra FRFETTM MOSFET 600V, 6.5A, 1.35? |
Fairchild Semiconductor |
| 68 |
FQB8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 69 |
FQB8N60CF |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 70 |
FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 71 |
FQI8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 72 |
FQI8N60CTU |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 73 |
FQP8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 74 |
FQPF8N60C |
600V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 75 |
FQPF8N60CF |
N-Channel QFET� FRFET� MOSFET 600V, 6.26A, 1.5? |
Fairchild Semiconductor |
| 76 |
IRFPS38N60L |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package |
International Rectifier |
| 77 |
IXGH28N60BD1 |
Low VCE(sat) IGBT with Diode |
IXYS Corporation |
| 78 |
IXGT28N60BD1 |
Low VCE(sat) IGBT with Diode |
IXYS Corporation |
| 79 |
KF8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 80 |
KF8N60P |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 81 |
KP8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 82 |
KP8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 83 |
KP8N65D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 84 |
KPS8N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 85 |
KPS8N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 86 |
KPS8N65D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 87 |
KPS8N65F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 88 |
MCPF08N60 |
Medium Power MOSFETS |
Micro Commercial Components |
| 89 |
MTP8N60 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 90 |
MTW8N60E |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Motorola |
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